JAN2N2905A Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

JAN2N2905A

Switching Transistor

ON Semiconductor 

2N2905A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0)

Collector−Base Cutoff Current (VCE = −60 Vdc)

Collector to Base Cutoff Current

(VCB = −50 Vdc)

(VCB = −50 Vdc, TA = 150°C)

(VCB = −60 Vdc)

Emitter to Base Cutoff Current

(VEB = 5.0 Vdc)

(VEB = 3.5 Vdc)

ON CHARACTERISTICS

DC Current Gain

(IC = −0.1 mAdc, VCE = −10 Vdc)

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −150 mAdc, VCE = −10 Vdc) (Note 1)

(IC = −500 mAdc, VCE = −10 Vdc) (Note 1)

(IC = −1.0 mAdc, VCE = −10 Vdc, TA = −55°C)

Collector −Emitter Saturation Voltage (Note 1)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

Base −Emitter Saturation Voltage (Note 1)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Small Signal Short−Circuit Forward Current Transfer Ratio

(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)

Small Signal Short−Circuit Forward Current Transfer Ratio

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1 kHz)

Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)

Input Capacitance (VEB = −2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn−On Time

See MIL−PRF−19500/290

Turn−Off Time

1. Pulse Test: See section 4 of MIL−STD−750.

See MIL−PRF−19500/290

Symbol

Min

Max

Unit

V(BR)CEO

ICES

ICBO

IEBO

−60

−

Vdc

−

−1.0

mAdc

mAdc

−

−0.01

−

−10

−

−10

mAdc

−

−10

−

−0.050

hFE

−

75

−

100

450

100

−

100

300

50

−

50

−

VCE(sat)

Vdc

−

−0.4

−

−1.6

VBE(sat)

Vdc

−

−1.3

−

−2.6

|hfe|

hfe

Cobo

Cibo

ton

toff

−

2.0

−

−

100

−

−

8.0

pF

−

30

pF

−

45

ns

−

300

ns

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