2N2894(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N2894 Datasheet PDF : 3 Pages
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NPN 2N2894
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
ICBO
ICES
VCEO (*)
Collector Cutoff Current
Collector Cutoff Current
Collector Emitter Breakdown
Voltage
VCB =-6 V, IE =0V
Tj =125°C
VBE =0 V, VCE =-6 V
IC =-10 mA, IB =0
-
- -10 µA
-
- -80 nA
-12 -
-
V
VCES
Collector Emitter Breakdown
Voltage
VBE =0 V, IC =-10 µA
-12 -
-
V
VCBO
Collector Base Breakdown
Voltage
IC =-10 µA, IE =0
-12 -
-
V
VEBO
Emitter Base Breakdown
Voltage
IE =-100 µA, IC =0
-4
-
-
V
IC =-10 mA, VCE =-0.3 V 30
-
-
IC =-30 mA, VCE =-0.5 V 40
- 150
hFE (*)
DC Current Gain
IC =-100 mA, VCE =-1 V 25
-
-
-
IC =150 mA, VCE =10 V
Tamb = -55°
17
-
-
VCE(SAT) (*)
Collector-Emitter saturation
Voltage
IC =-10 mA, IB =-1 mA
-
- -0.15
IC =-30 mA, IB =-3 mA
-
- -0.2
IC =-100 mA, IB =-10 mA -
IC =-10 mA, IB =-1 mA -0.78
-
-
-0.5
-0.98
V
VBE(SAT) (*) Base-Emitter saturation Voltage IC =-30 mA, IB =-3 mA -0.85 - -1.2
fT
Transition frequency
IC =-100 mA, IB =-10 mA -
- -1.7
IC =-30 mA, VCE =-10 V
f = 100MHz
400
-
- MHz
CCBO
Collector-Base Capacitance
IE = 0 ,VCB =-5 V
f = 1MHz
-
-
6 pF
CEBO
Emitter-Base Capacitance
IC = 0 ,VEB =-0.5 V
f = 1MHz
-
-
6 pF
ton
Turn-on Time
toff
Turn-off Time
IC =-30 mA, VCC =-2 V
IB1 = -1.5mA
IC =-30 mA, VCC =-2 V
IB1 = -IB2 = -1.5mA
-
- 60
ns
-
- 90
(*) Pulse conditions : tp < 300 µs, δ =1%
15/10/2012
COMSET SEMICONDUCTORS
2|3
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