2N2894(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
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2N2894 Datasheet PDF : 3 Pages
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NPN 2N2894
HIGH-SPEED SATURATED SWITCHES
The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
They are intended for high speed, low saturation switching applications up to 100 mA.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCES
VEBO
IC
PD
TJ
TStg
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage(VBE = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
@ Tamb = 25°
Total Power Dissipation
@ Tcase= 25°
@ Tcase<100°
Junction Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
-12
-12
-12
-4
-200
0.36
1.2
1
-65 to +200
-65 to +200
Unit
V
V
V
V
mA
W
°C
°C
Value
486
146
Unit
°C/ W
°C/ W
COMSET SEMICONDUCTORS
1/3
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