2N2857 Ver la hoja de datos (PDF) - Unspecified

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2N2857

Silicon Bipolar Low Noise Microwave Transistors

Unspecified 

Silicon Bipolar Low Noise

Microwave Transistors

Features

• High Gain (19dB Typical @ 450 MHz)

• Low Noise Figure At Low Ic

• Gold Metalization

• Useful To 700 MHz

• Can be Screened to JANTX, JANTXV Equivalent Levels

• Excellent Reliability

Description

Designed especially for low cost, high reliability type

applications, this NPN Silicon Planar Transistor offers

low noise, high gain performance, which meets or

exceeds all JAN specifications. These devices can be

fully tested and screened in accordance with MIL-MRF-

19500 procedures. A 1.8 GHz current gain-bandwidth

product (fT) is typical for this device. The transistors are

rugged and employ gold metalization for an

unprecedented reliability.

Applications

IF, VHF, UHF, TV and RF amplifiers.

Case Style TO-72 CAN (509)

2N2857

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

1

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

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