2N2857 Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza

componentes Descripción

Fabricante

2N2857

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

2N2857

Features

• Silicon NPN, To-72 packaged UHF Transistor

• 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC

• Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz

2

1

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

DESCRIPTION:

The 2N2857 is a silicon NPN transistor, designed for UHF equipment. Applications

include low noise amplifier; oscillator, and mixer applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

VCBO

VEBO

PD

IC

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Maximum Device Dissipation

Collector Current

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

Value

15

30

2.5

200

40

0.88

Unit

V

V

V

mW

mA

º C/mW

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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