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2N2222A Datasheet PDF : 2 Pages
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SEME
LAB
2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
OFF CHARACTERISTICS
V(BR)CEO Collector – Emitter Sustaining Voltage IC = 10mA IB = 0
40
V(BR)CBO Collector – Base Breakdown Voltage IC = 10μA
IE = 0
75
V(BR)EBO Emitter – Base Breakdown Voltage
IE = 10μA
IC = 0
6
ICEX
Collector Cut-off Current
VCE = 60V VEB(off) = 3V
ICBO
Collector – Base Cut-off Current
IE = 0
VCB = 60V
TA = 150°C
IEBO
Emitter Cut-off Current (IC = 0)
IC = 0
VEB = 3V
IBL
Base Current
VCE = 60V VEB(off) = 3V
ON CHARACTERISTICS
VCE(sat)1
Collector – Emitter Saturation Voltage IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
VBE(sat)1 Base – Emitter Saturation Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IC = 50mA
0.6
IC = 0.1mA VCE = 10V
35
IC = 1mA
VCE = 10V
50
IC = 10mA VCE = 10V
75
hFE
DC Current Gain
TA = –55°C
35
IC = 150mA VCE = 10V 1
100
IC = 150mA VCE = 1V 1
50
IC = 500mA VCE = 10V 1
40
SMALL SIGNAL CHARACTERISTICS
fT
Transition Frequency 2
IC = 20mA VCE = 20V f = 100MHz 300
Cob
Output Capacitance
VCB = 10V IE = 0
f = 100kHz
Cib
Input Capacitance
VEB = 0.5V IC = 0
f = 100kHz
hfe
Small Signal Current Gain IC = 1mA
VCE = 10V f = 1kHz
50
IC = 10mA VCE = 10V f = 1kHz
75
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 30V
VBE(off) = 0.5V
tr
Rise Time
IC = 150mA
IB1 = 15mA
ts
Storage Time
VCC = 30V
IC = 150mA
tf
Fall Time
IB1 = IB2 = 15mA
NOTES:
1) Pulse test: tp ≤ 300μs , δ ≤ 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.
Typ.
Max. Unit
V
V
V
10
nA
0.01
μA
10
10
nA
20
nA
0.3
V
1
1.2
V
2
—
300
MHz
8
pF
25
300
—
375
10
ns
25
225
ns
60
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Document Number 3554
Issue 1
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