1SS355 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

1SS355

Silicon Epitaxial Planar Diode

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Diode

1SS355

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Forward voltage

Reverse current

Capacitance between

terminals

Reverse Recovery Time

Symbol

VF

IR

CT

Min.

Typ.

Max. Unit

1.2 V

0.1 μA

3

pF

Conditions

IF=100mA

VR=80V

VR=0.5V,f=1MHz

trr

4

ns IF=10mA,VR=6V,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSDB001

Rev.A

www.galaxycn.com

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