1SS198 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

1SS198

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

Renesas Electronics 

1SS198

Absolute Maximum Ratings

(Ta = 25°C)

Item

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Symbol

VR

IO

Tj

Tstg

Value

Unit

10

V

30

mA

125

°C

–55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Condition

Forward current

IF

Reverse current

IR

Capacitance

C

ESD-Capability *1

—

4.5

—

—

—

—

—

100

—

—

mA VF = 1 V

70

µA

VR = 6 V

1.5

pF

VR = 1 V, f = 1 MHz

—

V

C = 200 pF, Both forward and

reverse direction 1 pulse.

Note: 1. Failure criterion; IR ≥ 140 µA at VR = 6 V

Rev.2.00, Oct.23.2003, page 2 of 4

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