IXFP4N100Q(2011) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFP4N100Q Datasheet PDF : 4 Pages
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Figure 7. Gate Charge
15
12
VDS = 600 V
ID = 3 A
IG = 10 mA
9
6
3
0
0 10 20 30 40 50 60
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
10
8
6
TJ = 125OC
4
TJ = 25OC
2
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 11. Transient Thermal Resistance
1.00
2000
1000
100
IXFA4N100Q
IXFP4N100Q
Figure 8. Capacitance Curves
Ciss
Coss
Crss
f = 1MHz
10
0 5 10 15 20 25 30 35
VDS - Volts
5
4
60
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
0.10
0.01
10-4
10-3
10-2
10-1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
101
IXYS REF: IXT_4N100Q (4U)04-01-11-A
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