IXFA4N100Q(2011) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFA4N100Q Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
1.5
2.5
S
1050
pF
120
pF
30
pF
17
ns
15
ns
32
ns
18
ns
39
nC
9
nC
23
nC
0.50
0.80 °C/W
°C/W
IXFA4N100Q
IXFP4N100Q
TO-263 Outline
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = IS, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
4A
16 A
1.5 V
0.52
1.80
250 ns
μC
A
TO-220 Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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