1SMA5.0AT3G(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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1SMA5.0AT3G Datasheet PDF : 5 Pages
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1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
VRWM
(Note 6)
Volts
IR @
VRWM
mA
Breakdown Voltage
VBR (Volts) (Note 7)
Min Nom Max
@ IT
mA
VC @ IPP
(Note 8)
VC
Volts
IPP
Amps
C Typ.
(Note 9)
pF
1SMA5.0AT3G
1SMA6.0AT3G
1SMA6.5AT3G
QE
5.0
400
6.4
6.7
7.0
10
9.2
43.5
2035
QG
6.0
400
6.67 7.02 7.37
10
10.3 38.8
1730
QK
6.5
250
7.22
7.6
7.98
10
11.2
35.7
1605
1SMA8.0AT3G
1SMA8.5AT3G
1SMA9.0AT3G
QR
8.0
QT
8.5
QV
9.0
25
8.89 9.36 9.83
1
13.6 29.4
5.0
9.44 9.92 10.4
1
14.4 27.8
2.5
10 10.55 11.1
1
15.4 26.0
1035
1265
1200
1SMA10AT3G
1SMA11AT3G
1SMA12AT3G
1SMA13AT3G
QX
10
QZ
11
RE
12
RG
13
2.5
11.1 11.7 12.3
1
17.0 23.5
2.5
12.2 12.85 13.5
1
18.2 22.0
2.5
13.3 14.0 14.7
1
19.9 20.1
2.5
14.4 15.15 15.9
1
21.5 18.6
1090
1000
925
860
1SMA14AT3G
1SMA15AT3G
1SMA16AT3G
1SMA17AT3G
RH
14
2.5
15.6 16.4 17.2
1
23.2 17.2
800
RM
15
2.5
16.7 17.6 18.5
1
24.4 16.4
758
RP
16
2.5
17.8 18.75 19.7
1
26.0 15.4
715
RR
17
2.5
18.9 19.9 20.9
1
27.6 14.5
680
1SMA18AT3G
1SMA20AT3G
1SMA22AT3G
1SMA24AT3G
RT
18
2.5
20 21.05 22.1
1
29.2 13.7
645
RV
20
2.5
22.2 23.35 24.5
1
32.4 12.3
585
RX
22
2.5
24.4 25.65 26.9
1
35.5 11.3
540
RZ
24
2.5
26.7 28.1 29.5
1
38.9 10.3
500
1SMA26AT3G
1SMA28AT3G
1SMA30AT3G
1SMA33AT3G
SE
26
2.5
28.9 30.4 31.9
1
42.1
9.5
460
SG
28
2.5
31.1 32.75 34.4
1
45.4
8.8
430
SK
30
2.5
33.3 35.05 36.8
1
48.4
8.3
405
SM
33
2.5
36.7 38.65 40.6
1
53.3
7.5
375
1SMA36AT3G
1SMA40AT3G
1SMA43AT3G
1SMA45AT3G
SP
36
2.5
40
42.1 44.2
1
58.1
6.9
345
SR
40
2.5
44.4 46.75 49.1
1
64.5
6.2
315
ST
43
2.5
47.8 50.3 52.8
1
69.4
5.8
295
SV
45
2.5
50 52.65 55.3
1
72.2
5.5
280
1SMA48AT3G
1SMA54AT3G
1SMA58AT3G
SX
48
2.5
53.3 56.1 58.9
1
77.4
5.2
265
TE
54
2.5
60 63.15 66.3
1
87.1
4.6
240
TG
58
2.5
64.4 67.8 71.5
1
93.6
4.3
225
1SMA70AT3G
1SMA75AT3G
TP
70
2.5
77.8 81.9 86.0
1
113
3.5
190
TR
75
2.5
83.3 87.7 92.1
1
121
3.3
180
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias voltage = 0 V, F = 1.0 MHz, TJ = 25C.
†Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices.
* Include SZ-prefix devices where applicable.
http://onsemi.com
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