DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGH12N100U1 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGH12N100U1 Datasheet PDF : 5 Pages
1 2 3 4 5
IXGH12N100U1
IXGH12N100AU1
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1MHz
6
10
S
750
pF
120
pF
30
pF
Q
g
Q
I = I , V = 15 V, V = 0.5 V
ge
C
C90 GE
CE
CES
Qgc
65 90 nC
8 20 nC
24 45 nC
td(on)
100
ns
tri
Inductive load, TJ = 25°C
200
ns
t
IC = IC90, VGE = 15 V, L = 300 mH
850 1000 ns
d(off)
t
VCE = 800 V, RG = Roff = 120 W
12N100U1 800 1000 ns
fi
Remarks: Switching times may
12N100AU1 500 700 ns
Eoff
increase for VCE (Clamp) > 0.8 VCES,
higher T or increased R
12N100U1
2.5
mJ
J
G
12N100AU1 1.5 3.0 mJ
td(on)
100
ns
tri
Inductive load, TJ = 125°C
200
ns
E(on)
IC = IC90, VGE = 15 V, L = 300 mH
1.1
mJ
td(off)
VCE = 800 V, RG = Roff = 120 W
900
ns
tfi
Remarks: Switching times may
12N100U1 1250
ns
increase for VCE (Clamp) > 0.8 VCES,
12N100AU1 950
ns
Eoff
higher TJ or increased RG
12N100U1 3.5
mJ
12N100AU1 2.2
mJ
RthJC
RthCK
1.25 K/W
0.25
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Reverse Diode (FRED)
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions
Characteristic Values
Min. Typ. Max.
VF
IF =8A, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
2.75 V
IRM
trr
RthJC
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 540 V
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V
6.5
TJ = 125°C 120
TJ = 25°C 50
A
ns
60 ns
2.5 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]