MAS110S12W Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MAS110S12W Datasheet PDF : 9 Pages
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100
Tj = 125˚C
10
IFM = 400A
IFM = 200A
IFM = 100A
IFM = 60A
IFM = 40A
MAS110S
1.0
1.0
1.0
10
100
Rate of rise of reverse current dIRR/dt - (A/µs)
Fig.7 Recovered charge (diode only)
1000
0.1
0.01
0.001
0.01
0.1
1.0
10
Time - (s)
Fig.8 Maximum (limit) transient thermal impedance (thyristor only)
7/9
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