MAS110S14S Ver la hoja de datos (PDF) - Dynex Semiconductor

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MAS110S14S

Fast Turn-off Asymmetric Thyristor/Diode Module

Dynex Semiconductor 

THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

I

GT

V

RGM

IFGM

P

GM

PG(AV)

Gate trigger voltage

Gate trigger current

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 12V, Tcase = 25oC, RL = 30Ω

V = 12V, T = 25oC

DRM

case

Anode positive with respect to cathode

-

Average timing = 10ms

MAS110S

Typ. Max. Units

-

4.0

V

-

250 mA

-

7.0

V

-

10

A

-

50

W

-

15

W

DIODE CURRENT RATINGS

Symbol

I

T(AV)

IT(RMS)

Parameter

Mean forward current

RMS value

Conditions

Half wave resistive load, Tcase = 75oC

T = 75oC

case

Max.

112

175

Units

A

A

DIODE SURGE RATINGS - PER ARM

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 130oC

VR = 0% VRRM

Max. Units

3.5

kA

61.25 x 103 A2s

DIODE DYNAMIC CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

I

Peak reverse current

RRM

trr

Reverse recovery time

VTO

Threshold voltage

rT

Forward slope resistance

Conditions

At 600A, Tcase = 25˚C.

At V , T = 125˚C.

RRM case

T

case

=

125˚C,

dI /dt

R

=

-50V/µs,

I

FM

=

200A

At Tvj = 125˚C.

At Tvj = 125˚C.

Max.

2.65

70

1.3

1.6

1.5

Units

V

mA

µs

V

mΩ

3/9

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