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MAS110S06

Fast Turn-off Asymmetric Thyristor/Diode Module

Dynex Semiconductor 

MAS110S

THYRISTOR SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 125oC

V = 0% V

R

DRM

Max. Units

2.0

kA

20.0 x 103 A2s

THYRISTOR DYNAMIC CHARACTERISTICS

Symbol

VTM

IDRM

dV/dt

dI/dt

VT(TO)

r

T

t

q

Parameter

Conditions

Min.

Maximum on-state voltage

At 600A peak, Tcase = 25oC

-

Peak off-state current

At VDRM, Tcase = 125oC

-

Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit

-

Rate of rise of on-state current

From 67% V to 600A,

DRM

Repetitive 50Hz

-

Gate source 20V, 20Ω

t

r

=

<

0.5µs,

T

j

=

125˚C

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

At T = 125oC

-

vj

Turn-off time

I = 100A, T = 125˚C,

T

j

t code: W

q

-

dIR/dt = 30A/µs, VGK = 0V

t code: S

-

dV/dt = 20V/µs to 60%

q

VDRM, VR = 1V.

tq code: X

-

Max. Units

2.9

V

70 mA

1000 V/µs

500 A/µs

1.6

V

1.4 mΩ

10

µs

12

µs

15

µs

2/9

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