TF70912B Ver la hoja de datos (PDF) - Dynex Semiconductor
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TF70912B Datasheet PDF : 13 Pages
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DYNAMIC CHARACTERISTICS
TF709..Y
Symbol
Parameter
Conditions
Min. Max. Units
V
Maximum on-state voltage
TM
At 2000A peak, T = 25oC
case
-
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit -
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
Repetitive 50Hz -
Non-repetitive -
VT(TO)
Threshold voltage
At Tvj = 125oC
-
rT
On-state slope resistance
At Tvj = 125oC
-
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
-
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
-
I
Holding current
H
T = 25oC, I = 1A, V = 12V
j
TM
D
100*
I
Latching current
L
t
Turn-off time
q
*Typical value.
T = 25oC, I = 0.5A, V = 12V
j
G
D
300*
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
tq code: Y
-
dIR/dt = 50A/µs, Gate open circuit
2.05 V
40 mA
300 V/µs
500 A/µs
800 A/µs
1.25 V
0.4 mΩ
1.5* µs
3.5* µs
-
mA
-
mA
25
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
V
GD
VRGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, Tcase = 25oC, RL = 6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At
V
DRM
T
case
=
125oC,
R
L
=
1kΩ
Anode positive with respect to cathode
Typ. Max. Units
-
3.0
V
-
200 mA
-
0.2
V
-
5.0
V
-
10
A
-
50
W
-
3
W
3/13
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