TF70908B Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

TF70908B

Fast Switching Thyristor

Dynex Semiconductor 

TF709..Y

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) on-state current

TSM

I2t

I2t for fusing

Conditions

10ms half sine; V = 0% V , T = 125˚C

R

RRM j

10ms half sine; VR = 0% VRRM, Tj = 125˚C

Max. Units

12.0

kA

720 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

T

Virtual junction temperature

vj

T

Storage temperature range

stg

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 10.0kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

-

0.04 oC/W

- 0.072 oC/W

- 0.096 oC/W

-

0.01 oC/W

-

0.02 oC/W

-

125

oC

-

125

oC

-40 150

oC

14.25 15.75 kN

MEASUREMENT OF RECOVERED CHARGE - QRA1

Measurement of QRA1 : QRA1 = IRR x tRR

2

ITM

tp = 1ms

dIR/dt

QRA1

0.5x IRR

IRR

2/13

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