DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1N5391 Ver la hoja de datos (PDF) - DIOTEC Electronics Corporation

Número de pieza
componentes Descripción
Fabricante
1N5391
DEC
DIOTEC Electronics Corporation DEC
1N5391 Datasheet PDF : 2 Pages
1 2
1N5391 THRU 1N5399
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-15 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.014 ounce, 0.40 grams
DO-15
0.140 (3.6)
0.104(2.6)
DIA.
1.0 (25.4)
MIN.
0.300(7.6)
0.230(5.8)
0.034 (0.90)
0.028 (0.70)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375(9.5mm) lead length at TA=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.5A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N 1N
5391 5392
1N 1N 1N 1N
5393 5394 5395 5396
1N
5397
1N 1N
5398 5399
UNITS
VRRM 50 100 200 300 400 500 600 800 1000 V
VRMS 35 70 140 210 280 350 420 560 700 V
VDC 50 100 200 300 400 500 600 800 1000 V
I(AV)
1.5
A
IFSM
VF
IR
CJ
R JA
TJ,TSTG
50.0
1.1
5.0
50.0
20.0
50.0
-65 to +150
A
V
µA
pF
C/W
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]