TA44912W Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TA44912W

Asymmetric Thyristor

Dynex Semiconductor 

TA449..W

Notes:

1. dI/dt = 100A/µs.

2. VD ≤ 600V.

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.

Fig.13 Maximum on-state conduction characteristic (Tj =

125˚C)

Fig.14 Non-repetitove sub-cycle surge on-state current and

I2t rating. (Initial Tj = 125˚C)

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