TA44910W Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TA44910W

Asymmetric Thyristor

Dynex Semiconductor 

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

I

GT

VGD

VRGM

I

FGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Min. non trigger voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Average gate power

Conditions

VDWM = 12V, RL = 3Ω, Tcase = 25oC

VDWM = 12V, RL = 3Ω, Tcase = 25oC

-

-

-

-

Average time 10ms max

TA449..W

Min. Max. Units

-

5

V

-

400 mA

0.2

-

V

-

5

V

-

4

A

-

16

W

-

3

W

3/12

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