TA44914W Ver la hoja de datos (PDF) - Dynex Semiconductor
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TA44914W Datasheet PDF : 12 Pages
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TA449..W
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
R
th(c-h)
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 5.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
-
0.07 oC/W
- 0.133 oC/W
- 0.154 oC/W
-
0.02 oC/W
-
0.04 oC/W
-
135
oC
-
125
oC
-40 150
oC
4.5 5.5
kN
DYNAMIC CHARACTERISTICS
Symbol
VTM
IRRM
I
DRM
dV/dt
dI/dt
I
H
IL
tq
Parameter
Conditions
Maximum on-state voltage
At 600A peak, Tcase = 125oC
Peak reverse current
At VRRM, Tcase = 125oC
Off-state current
At V , T = 125oC
DRM case
Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit
Rate of rise of on-state current
Gate source 20V, 20Ω
t
r
≤
5µs.
Non-repetitive
Repetitive
Holding current
Latching current
Max. turn-off time
T = 25oC, I = 1A, V = 12V
j
TM
D
Tj = 25oC, IG = 0.5A, VD = 12V
VR = DF451 voltage drop,
Tj = 125oC, ITM = 200A,
dV/dt = 400V/µs (linear to 60% VDRM),
tdIR/dt = 30A/µs Gate open.
Typ. Max. Units
-
2.9
V
-
40 mA
-
1
mA
-
1000 V/µs
-
1000 A/µs
-
500 A/µs
-
80 mA
-
300 mA
-
10
µs
tgt
Typ. turn-on time (total)
tgd
Typ. delay time
Tj = 25oC, IT = 50A,
V
D
=
300V,
I
G
=
1A,
dI/dt
=
50A/µs,
dI /dt
G
=
1A/µs
3
-
µs
1.5
-
µs
2/12
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