DG408BP45 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG408BP45 Datasheet PDF : 19 Pages
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DG408BP45
2500
2000
Conditions:
Tj = 25°C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
1500
VDRM
0.75x VDRM
0.5x VDRM
1000
500
0
0
250
500
750
1000
1250
On-state current IT - (A)
Fig.15 Turn-off energy vs on-state current
2500
2250
Conditions:
Tj = 25°C,
CS = 1.0µF,
IT = 1000A
VDRM
0.75x VDRM
2000
0.5x VDRM
1500
1750
10/19
1500
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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