DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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DG408BP45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

5.0

tr

4.0

Conditions: Tj = 125˚C, IFGM = 30A,

CS = 1.0µF, VD = 3000V,

3.0

RS = 10 Ohms, dIT/dt = 300A/µs

2.0

1.0

0

td

250

500

750

1000

1250

On-state current IT - (A)

Fig.13 Delay time & rise time vs turn-on current

8.0

Conditions:

7.0

Tj = 125˚C, IT = 1000A,

CS = 1.0µF,

RS = 10 Ohms,

6.0

dI/dt = 300A/µs,

dIFG/dt = 30A/µs,

5.0

VD = 3000V

4.0

tr

3.0

2.0

td

1.0

0

0

20

40

60

80

Peak forward gate current IFGM - (A)

Fig.14 Delay time & rise time vs peak forward gate current

1500

9/19

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