DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DG408BP45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

1500

Conditions:

IG(ON) = 4.0A

dc

1000

500

180˚

120˚

60˚

30˚

0

0

200

400

600

Mean on-state current IT(AV) - (A)

70 80 90 100 120 130

Maximum permissible case

temperature - (˚C)

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

1500

Conditions:

IG(ON) = 4.0A

1000

500

180˚

120˚

90˚

60˚

30˚

0

0 50 100 150 200 250 300 350 80 90 100 120 130

Mean on-state current IT(AV) - (A)

Maximum permissible case

temperature - (˚C)

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

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