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1N4150TR Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
1N4150TR
Vishay
Vishay Semiconductors Vishay
1N4150TR Datasheet PDF : 3 Pages
1 2 3
www.vishay.com
1N4150
Vishay Semiconductors
Small Signal Fast Switching Diodes
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diode
• Low forward voltage drop
• AEC-Q101 qualified
• High forward current capability
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High speed switch and general purpose use in computer
and industrial applications
PARTS TABLE
PART
ORDERING CODE
1N4150
1N4150TR or 1N4150TAP
TYPE MARKING
1N4150
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average peak forward current
Forward continuous current
Average forward current
Power dissipation
tp = 1 μs
VR = 0
l = 4 mm, TL = 45 °C
l = 4 mm, TL 25 °C
VRRM
VR
IFSM
IFRM
IF
IF(AV)
Ptot
Ptot
VALUE
50
50
4
600
300
150
440
500
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
l = 4 mm, TL = constant
RthJA
Tj
Tstg
VALUE
350
175
-65 to +175
UNIT
V
V
A
mA
mA
mA
mW
mW
UNIT
K/W
°C
°C
Rev. 1.9, 06-Jul-17
1
Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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