DG406BP25 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG406BP25

Gate Turn-off Thyristor

Dynex Semiconductor 

4.0

Conditions: Tj = 125˚C, IFGM = 30A,

CS = 1.0µF, VD = 2000V,

RS = 10 Ohms, dIT/dt = 300A/µs

3.0

tr

DG406BP25

2.0

td

1.0

0

0

250

500

750

1000

1250

1500

On-state current IT - (A)

Fig.13 Delay time & rise time vs turn-on current

5.0

Conditions:

Tj = 125˚C, IT = 1000A,

CS = 1.0µF,

RS = 10 Ohms,

4.0

dI/dt = 300A/µs,

dIFG/dt = 30A/µs,

VD = 2000V

3.0

tr

2.0

td

1.0

0

0

20

40

60

80

Peak forward gate current IFGM - (A)

FFIiGg.1144DDelEaLy AtimY eT&IMrEise&tiRmISe EvsTpIMeaEk forwPaErAd KgaFteOcRuWrreAnRt D

9/19

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