DG406BP25 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG406BP25

Gate Turn-off Thyristor

Dynex Semiconductor 

DG406BP25

1500

Conditions:

IG(ON) = 4.0A

dc

1000

500

60˚

30˚

180˚

120˚

0

0

200

400

600

Mean on-state current IT(AV) - (A)

70 80 90 100 120 130

Maximum permissible case

temperature - (˚C)

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

1500

Conditions:

IG(ON) = 4.0A

1000

500

180˚

120˚

90˚

60˚

30˚

0

0 100 200 300 400 500 600

Mean on-state current IT(AV) - (A)

70 80 90 100 120 130

Maximum permissible case

temperature - (˚C)

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

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