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Número de pieza
componentes Descripción
DG406BP25 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG406BP25
Gate Turn-off Thyristor
Dynex Semiconductor
DG406BP25 Datasheet PDF : 19 Pages
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DG406BP25
4000
3500
Conditions:
C
S
= 1.0µF,
I
T
= 1000A
3000
2500
T
j
= 125
˚
C
2000
T
j
= 25
˚
C
1500
10
20
30
40
50
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
V
D
= 1250V
T
j
= 125
˚
C
500
V
D
= 1650V
0
0.1
1.0
10
100
1000
Gate cathode resistance R
GK
- (Ohms)
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
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