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Número de pieza
componentes Descripción
DG406BP25 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG406BP25
Gate Turn-off Thyristor
Dynex Semiconductor
DG406BP25 Datasheet PDF : 19 Pages
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500
Conditions:
C
S
= 1.0µF,
I
T
= 1000A
450
400
T
j
= 125
˚
C
T
j
= 25
˚
C
DG406BP25
350
300
250
10
20
30
40
50
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
4000
Conditions:
C
S
= 1.0µF,
dI
GQ
/dt = 30A/µs
3000
T
j
= 125
˚
C
2000
T
j
= 25
˚
C
1000
0
0
250
500
750
1000
1250
1500
On-state current I
T
- (A)
Fig.26 Turn-off gate charge vs on-state current
15/19
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