DG406BP25(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG406BP25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG406BP25

CURVES

2.0

4.0

1.5

3.0

1.0

2.0

VGT

0.5

1.0

IGT

0

0

-50 -25 0 25 50 75 100 125 150

Junction temperature Tj - (˚C)

Fig.1 Maximum gate trigger voltage/current vs junction temperature

4.0

Measured under pulse conditions.

IG(ON) = 4.0A

Half sine wave 10ms

3.0

1.5

Tj = 25˚C

Tj = 125˚C

2.0

1.0

1.0

0

1.0

2.0

3.0

4.0

5.0

Instantaneous on-state voltage VTM - (V)

Fig.2 On-state characteristics

0.5

0

0.25

Conditions:

Tj = 125˚C, VDM = VDRM,

dIGQ/dt = 30A/µs

0.50 0.75 1.00 1.25 1.5 1.75 2.0

Snubber capacitance CS - (µF)

Fig.3 Maximum dependence of ITCM on CS

4/19

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