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DG406BP25(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
DG406BP25
(Rev.:2000)
Dynex
Dynex Semiconductor Dynex
DG406BP25 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Replaces March 1998 version, DS4090-2.3
DG406BP25
DG406BP25
Gate Turn-off Thyristor
DS4090-3.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC).
s Uninterruptable Power Supplies
s High Voltage Converters.
s Choppers.
s Welding.
s Induction Heating.
s DC/DC Converters.
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
1000A
2500V
400A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling.
s High Reliability In Service.
s High Voltage Capability.
s Fault Protection Without Fuses.
s High Surge Current Capability.
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
VOLTAGE RATINGS
Outline type code: P.
See Package Details for further information.
Type Number
DG406BP25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
V
DRM
V
V
RRM
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF 1000
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
400
RMS on-state current
T = 80oC. Double side cooled. Half sine 50Hz.
630
HS
Units
A
A
A
1/19

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