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Número de pieza
componentes Descripción
DG406BP25(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG406BP25
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG406BP25 Datasheet PDF : 19 Pages
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25
Conditions:
C
S
= 1.0µF,
I
T
= 1000A
20
DG406BP25
15
T
j
= 125˚C
10
T
j
= 25˚C
5
10
20
30
40
50
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
FIG 21 GATE STORAGE TIME RATE OF RISE OF
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
C
S
= 1.0µF,
dI
GQ
/dt = 30A/µs
1.5
T
j
= 125˚C
1.0
T
j
= 25˚C
0.5
0
0
250
500
750
1000
1250
1500
On-state current I
T
- (A)
FIG 22
F
G
ig
A
.
T
22
E
G
F
a
A
te
LL
fal
T
l
I
t
M
im
E
e vs o
O
n
N
-s
S
ta
T
te
A
c
T
u
E
rr
C
en
U
t
RRENT
13/19
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