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Número de pieza
componentes Descripción
DG406BP25(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG406BP25
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG406BP25 Datasheet PDF : 19 Pages
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DG406BP25
2500
2000
Conditions:
T
j
= 125˚C,
V
DM
= V
DRM
,
dI
GQ
/dt = 30A/µs
1500
1000
C
S
= 0.5µF
C
S
= 1.0µF
C
S
= 1.5µF
C
S
= 2.0µF
500
0
0
250
500
750
1000
1250
On-state current I
T
- (A)
FIG 19 TURN OFF ENERGY ON STATE CURRENT
Fig.19 Turn-off energy vs on-state current
2.0
Conditions:
C
S
= 1.0
µ
F,
dI
GQ
/dt = 30A/
µ
s
1.5
T
j
= 125˚C
1500
1.0
T
j
= 25˚C
0.5
12/19
0
0
250
500
750
1000
1250
1500
On-state current I
T
- (A)
Fig.20 Gate fall time vs on-state current
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