1N4006 Ver la hoja de datos (PDF) - Silicon Standard Corp.
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1N4006 Datasheet PDF : 3 Pages
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1N4004
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Parameter
Symbols 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Units
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
Maximum RMS voltage
VRMS
35
70
140
280
420
560
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=50oC
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) TA=50oC
Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length at TL=75oC
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time at
IFM=20mA, IRM=1mA (Note 2)
TA=25oC
TA=100oC
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance (Note 1)
Operating junction temperature range
VDC
50
100
200
400
600
800
IF(AV)
1.0
IFSM
30.0
IR(AV)
VF
IR
trr
CJ
RθJA
RθJL
TJ
30
1.1
5.0
50
1.0
15
50.0
25.0
-55 to +125
Storage temperature range
TSTG
-55 to +150
Notes: 1. Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
2. Measured on Tektronix type "S" recovery plug-in. Tektronix 545 scope or equivalent
1000
700
1000
Volts
Volts
Volts
Amp
Amps
uA
Volts
uA
uS
pF
oC/W
oC
oC
07/04/2007 Rev.1.00
www.SiliconStandard.com
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