TS616IDW(2002) Ver la hoja de datos (PDF) - STMicroelectronics

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TS616IDW
(Rev.:2002)

DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT

STMicroelectronics 

TS616

ELECTRICAL CHARACTERISTICS

VCC = ±2.5Volts, Rfb=910Ω,Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test Condition

DC PERFORMANCE

Vio Input Offset Voltage

Tamb

Tmin. < Tamb < Tmax.

∆Vio Differential Input Offset Voltage

Tamb = 25°C

Iib+ Positive Input Bias Current

Tamb

Tmin. < Tamb < Tmax.

Iib- Negative Input Bias Current

Tamb

Tmin. < Tamb < Tmax.

ZIN+ Input(+) Impedance

ZIN- Input(-) Impedance

CIN+ Input(+) Capacitance

Common Mode Rejection Ratio

CMR

20 log (∆Vic/∆Vio)

∆Vic = ±1V

Tmin. < Tamb. < Tmax.

Supply Voltage Rejection Ratio

SVR

20 log (∆Vcc/∆Vio)

∆Vcc=±2V to ±2.5V

Tmin. < Tamb. < Tmax.

ICC Total Supply Current per Operator

No load

DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTICS

ROL Open Loop Transimpedance

Vout = 2Vp-p, RL = 10Ω

Tmin. < Tamb. < Tmax.

-3dB Bandwidth

Small Signal Vout<20mVp

AV = 12dB, RL = 10Ω

BW Full Power Bandwidth

Large Signal Vout = 1.4Vp

AV = 12dB, RL = 10Ω

Gain Flatness @ 0.1dB

Small Signal Vout<20mVp

AV = 12dB, RL = 10Ω

Tr Rise Time

Vout = 2.8Vp-p, AV = 12dB

RL = 10Ω

Tf Fall Time

Vout = 2.8Vp-p, AV = 12dB

RL = 10Ω

Ts Settling Time

Vout = 2.2Vp-p, AV = 12dB

RL = 10Ω

SR Slew Rate

Vout = 2.2Vp-p, AV = 12dB

RL = 10Ω

VOH High Level Output Voltage

RL=10Ω Connected to GND

VOL Low Level Output Voltage

RL=10Ω Connected to GND

Output Sink Current

Iout

Output Source Current

Vout = -1.25Vp

Tmin. < Tamb < Tmax.

Vout = +1.25Vp

Tmin. < Tamb < Tmax.

Min.

55

63

2

20

100

1.5

-300

200

Typ.

0.2

1

4

7

1.1

1.2

71

62

1.5

61

60

79

78

11.5

4.2

1.5

28

20

5.7

11

11.5

39

130

1.7

-1.9

-400

-360

270

240

Max.

2.5

2.5

30

11

15

-1.7

Unit

mV

mV

µA

µA

kΩ

Ω

pF

dB

dB

mA

MΩ

MHz

MHz

ns

ns

ns

V/µs

V

V

mA

5/27

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