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181T2 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza
componentes Descripción
Fabricante
181T2
NJSEMI
New Jersey Semiconductor NJSEMI
181T2 Datasheet PDF : 3 Pages
1 2 3
•BOY 23,180 T2, *8DY 24,181 T2, *BDY 26,182 T2
STATIC CHARACTERISTICS
CARACTERISTIQUES STATIQUES
case
Test conditions
Conditions dtmesurt
Collector -emitter cut-off current
Counnt rttidutl colHcOur-jmtttmr
VCE=60V
'a =°
V=90V
'B -o
VCE=140V
I8 =0
'CEO
{Unless otherwisestated)
fSaut indications contninsl
Win. Typ. Max.
BOY 23
1
mA
BDY24
1
mA
BDY25
1
mA
Collector-emitter cut-off current
Counnt rtoldml colhcuur^mnnur
VCE=60V
VBE=°
VCE=IOOV
VBE = O
BDY23
180 T2
'CES
BDY 24
181 T2
0.6
mA
1
mA
Emitter-base cut-off current
Counnt rttitlui/ 4mttaur-btsf
VCE=180V
V8E=°
VEB=*IOV
'c -°
BDY 25
182 T2
'EBO
1
mA
1
mA
BDY 23
180 T2 60
V
Collector-eminer breakdown voltage
Ttnston dt clHtufgt coltfct*ur~imrttfur
lc = 50 mA
'a =°
V(BRICEO*
BDY 24
181 T2
90
V
BDY 25
182 T2
140
V
BDY 23
180 T2 60
V
Collector-base breakdown voltage
Ttniion Hi cUOUUt collfcttur-lita
IQ =3 mA
IE =o
V(BRICBO *
BDY 24
181 T2
100
V
> Pulsed
tn=300ius 2%
Impulsions
BDY 25
182 T2 200
V

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