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181T2 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza
componentes Descripción
Fabricante
181T2
NJSEMI
New Jersey Semiconductor NJSEMI
181T2 Datasheet PDF : 3 Pages
1 2 3
•BDY 23,180 T2, *BDY 24,181 T2, *BDY 25, 182 T2
STATIC CHARACTERISTICS
CARACTERISTIQUES STATIQUES
= 25°C
case
Test conditions
Conditions de mesurff
Static forward current transfer ratio
Vafeur fjitique du rapport da tranjfvrt
direct du counnt
VCE=4V
lc = 1 A
VCE=4V
lc = 2 A
h21E
(Unless otherwise stated)
ISauf indications contraires)
Min. Typ. Max.
A
55
B
65
C
90
A
15 20 45
B
30 45 90
C
75 82 100
Col lector -emitter saturation voltage
Tension de saturation colfoctour-eniiftttur
'c = 2 A
IB =0,25 A
BDY 23
180 T2
SDY24
VCESa,* 181 T2
BDY 25
182 T2
BDY 23
180 T2
Base-emitter saturation voltage
Tension de saturation b*s*~drr*nwf
'c = 2 A
IB =0,25 A
VBE»t*
BDY 24
181 T2
BDY 25
182 T2
DYNAMIC CHARACTERISTICS (for small signals)
CARACTEFl/ST/QUES D YNAMIQUES (pourpetits signauxl
Transition frequency
Fr$Qtj0nce de transition
VC£=15V
lc =0,5 A
fT
10
f =10 MHz
1
V
0,6
V
0,6
V
2
V
1,2
V
1,2
V
MHl
Turn-on time
Tamps total d'6tablitam*m
(fig. D
Turn-off time
Tempt total da mupurw
(fig. D
* Pulsed
t * 300 f£s 2%
Impulsions
'c = 5 A
IR = 1 A
'c = 5 A
IB, =1A
I "- n R A
'd + tr
+tf
0,3 0,5
1.5 2
M'

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