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OM7809/BGU6102/FM50,598

Wideband silicon low-noise amplifier MMIC

NXP Semiconductors. 

NXP Semiconductors

BGU6102

Wideband silicon low-noise amplifier MMIC

8. Dynamic characteristics

Table 8. Dynamic characteristics

Tamb = 25 C; VCC = 3.0 V; VENABLE  1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter

Conditions

Min Typ Max Unit

100 MHz frequency

s212 insertion power gain

MSG maximum stable gain

f = 100 MHz

ICC(tot) = 2 mA

-

16.0 -

dB

ICC(tot) = 3 mA

-

19.5 -

dB

ICC(tot) = 6 mA

-

14.5 -

dB

ICC(tot) = 10 mA - 28.0 -

dB

ICC(tot) = 20 mA - 31.5 -

dB

f = 100 MHz

ICC(tot) = 2 mA

-

ICC(tot) = 3 mA

-

ICC(tot) = 6 mA

-

ICC(tot) = 10 mA -

ICC(tot) = 20 mA -

NFmin minimum noise figure

f = 100 MHz

ICC(tot) = 2 mA

-

ICC(tot) = 3 mA

-

ICC(tot) = 6 mA

-

ICC(tot) = 10 mA -

ICC(tot) = 20 mA -

PL(1dB) output power at 1 dB gain compression f = 100 MHz

ICC(tot) = 2 mA

-

ICC(tot) = 3 mA

-

ICC(tot) = 6 mA

-

ICC(tot) = 10 mA -

ICC(tot) = 20 mA -

IP3O output third-order intercept point

f = 100 MHz

ICC(tot) = 2 mA

-

ICC(tot) = 3 mA

-

ICC(tot) = 6 mA

-

ICC(tot) = 10 mA -

ICC(tot) = 20 mA -

29.0 -

31.0 -

33.5 -

35.5 -

37.5 -

0.8 -

0.7 -

0.8 -

0.8 -

1.0 -

6.0 -

4.5 -

0.5 -

4.0 -

9.5 -

0.0 -

3.5 -

10.5 -

14.5 -

19.0 -

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dBm

dBm

dBm

dBm

dBm

dBm

dBm

dBm

dBm

dBm

BGU6102

Preliminary data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 21 September 2011

© NXP B.V. 2011. All rights reserved.

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