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OM7809/BGU6102/FM50,598 Ver la hoja de datos (PDF) - NXP Semiconductors.

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OM7809/BGU6102/FM50,598
NXP
NXP Semiconductors. NXP
OM7809/BGU6102/FM50,598 Datasheet PDF : 17 Pages
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BGU6102
Wideband silicon low-noise amplifier MMIC
Rev. 1 — 21 September 2011
Preliminary data sheet
1. Product profile
1.1 General description
The BGU6102 MMIC is a wideband amplifier in Silicon technology for high speed,
low-noise applications in a plastic, leadless 6 pin, small outline SOT1209 package.
1.2 Features and benefits
Small 6-pin leadless package 1.3 mm 2.0 mm 0.35 mm
Low noise high gain microwave MMIC
Applicable between 40 MHz and 4 GHz
Supply voltage 1.5 V to 5 V
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
37 GHz transit frequency - Silicon technology
Power-down mode current consumption < 6 A
ESD protection on all pins
1.3 Applications
FM radio
Mobile TV, CMMB
ISM
Wireless security
RKE, TPMS
AMR, ZigBee, Bluetooth
WiFi, WLAN, WiMAX
Low current applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V; f = 100 MHz unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
s212
insertion power gain
[1] -
13
MSG maximum stable gain
[2] -
31
NFmin minimum noise figure
[2] -
0.7
Pi(1dB) input power at 1 dB gain compression
[1] -
23
IP3I
input third-order intercept point
[1] -
15
Max
-
-
-
-
-
Unit
dB
dB
dB
dBm
dBm
[1] Measurements done on high-ohmic FM radio application board see Section 10.1; ICC(tot) = 3.1 mA.
[2] Measurements done on characterization board without matching, de-embedded up to the pins;
ICC(tot) = 3 mA.

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