FDD306P Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD306P Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -6.7A
4
3
2
VDS = -4V
-8V
-6V
1
0
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS =-4.5V
SINGLE PULSE
0.1
RθJA = 96oC/W
TA = 25 oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
2000
f = 1MHz
VGS = 0 V
1600
Ciss
1200
Coss
800
Crss
400
0
0
3
6
9
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
15
10
5
0
0.001 0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA (t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDD306P Rev. C
4
www.fairchildsemi.com
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