FDD306P Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDD306P Datasheet PDF : 5 Pages
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January 2005
FDD306P
P-Channel 1.8V Speciï¬ed PowerTrench® MOSFET
Features
■–6.7 A, –12 V.
RDS(ON) = 28 mΩ @ VGS = –4.5 V
RDS(ON) = 41 mΩ @ VGS = –2.5 V
RDS(ON) = 90 mΩ @ VGS = –1.8 V
â– Fast switching speed
â– High performance trench technology for extremely
low RDS(ON)
â– High power and current handling capability
Applications
â– DC/DC converter
General Description
This P-Channel 1.8V Speciï¬ed MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
D
G
S
TO-252
S
G
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
(Note 1b)
Ratings
–12
±8
–6.7
–54
52
3.8
1.6
–55 to +175
2.9
40
96
Package Marking and Ordering Information
Device Marking
FDD306P
Device
FDD306P
Reel Size
13’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDD306P Rev. C
www.fairchildsemi.com
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