BFM520 Ver la hoja de datos (PDF) - Philips Electronics
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BFM520 Datasheet PDF : 10 Pages
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Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM520
FEATURES
• Small size
• Temperature and hFE matched
• Low noise and high gain
• High gain at low current and low capacitance at low
voltage
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Oscillator and buffer amplifiers
• Balanced amplifiers
• LNA/mixers.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
PIN SYMBOL
DESCRIPTION
1
b1
base 1
2
e1
emitter 1
3
c2
collector 2
4
b2
base 2
5
e2
emitter 2
6
c1
collector 1
654
handbook, halfpage
c1
c2
b1
b2
123
Top view
Marking code: N2.
e1
e2
MAM210
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Any single transistor
Cre
fT
s21 2
feedback capacitance
transition frequency
insertion power gain
GUM
maximum unilateral power gain
F
noise figure
Rth j-s
thermal resistance from junction
to soldering point
CONDITIONS
MIN. TYP. MAX. UNIT
Ie = 0; VCB = 3 V; f = 1 MHz
−
IC = 20 mA; VCE = 3 V; f = 900 MHz −
IC = 20 mA; VCE = 3 V;
13
f = 900 MHz; Tamb = 25 °C
IC = 20 mA; VCE = 3 V;
−
f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VCE = 3 V;
−
f = 900 MHz; ΓS = Γopt
single loaded
−
double loaded
−
0.4 −
9
−
14.5 −
pF
GHz
dB
15
−
dB
1.2 1.6 dB
−
230 K/W
−
115 K/W
1996 Oct 08
2
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