EMX4(RevA) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
EMX4 Datasheet PDF : 4 Pages
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Transistors
EMX4 / UMX4N / IMX4
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zFeatures
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.9pF)
zEquivalent circuits
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
zExternal dimensions (Unit : mm)
EMX4
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
UMX4N
Each lead has same dimensions
(4)
(5) (6)
(3)
(2) (1)
1.25
2.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power EMX4 / UMX4N
dissipation
IMX4
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
30
20
3
50
150(TOTAL)
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW ∗1
∗2
°C
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX4
EMT6
X4
T2R
8000
UMX4N
UMT6
X4
TR
3000
IMX4
SMT6
X4
T108
3000
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMX4
Each lead has same dimensions
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
rbb' Cc
NF
Min.
Typ.
Max.
Unit
Conditions
30
−
−
V
IC=10µA
20
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA
VCB=15V
−
−
0.5
µA
VEB=2V
27
−
270
−
VCE/IC=10V/10mA
−
−
0.5
V
IC/IB=20mA/4mA
600
1500
−
MHz VCE/IE=10V/ −10mA, f=200MHz
∗
−
0.95
1.6
pF VCB/f=10V/1MHz, IE=0A
−
6
13
ps VCB=10V, IC=10mA , f=31.8MHz
−
4.5
−
dB VCE=12V, IC=2mA , f=200MHz , Rg=50Ω
Rev.A
1/3
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