DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AD8022(1999) Ver la hoja de datos (PDF) - Analog Devices

Número de pieza
componentes Descripción
Fabricante
AD8022
(Rev.:1999)
ADI
Analog Devices ADI
AD8022 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AD8022–SPECIFICATIONS (@ 25؇C, VS = ؎12 V, RL = 500 , G = 1, TMIN = –40؇C, TMAX = +85؇C, unless
otherwise noted)
Parameter
Conditions
Min
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth
Bandwidth for 0.1 dB Flatness
Large Signal Bandwidth
Slew Rate
Rise and Fall Time
Settling Time 0.1%
Overdrive Recovery Time
VOUT = 0.2 V p-p
VOUT = 0.2 V p-p
VOUT = 4 V p-p
VOUT = 2 V p-p, G = 2
VOUT = 2 V p-p, G = 2
VOUT = 2 V p-p
VOUT = 150% of Max Output
Voltage, G = 2
NOISE/DISTORTION PERFORMANCE
Distortion
Second Harmonic
Third Harmonic
Multitone Input Power Ratio1
Voltage Noise (RTI)
Input Current Noise
VOUT = 2 V p-p
fC = 1 MHz
fC = 1 MHz
G = 7 Differential
26 kHz to 132 kHz
144 kHz to 1.1 MHz
f = 100 kHz
f = 100 kHz
INPUT CHARACTERISTICS
RTI Offset Voltage
Input Bias Current
Input Resistance (Differential)
Input Capacitance
Input Common-Mode Voltage Range
TMIN to TMAX
TMIN to TMAX
–6
–7.25
–5
–7.5
OUTPUT CHARACTERISTICS
Output Voltage Swing
Short Circuit Output Current
Capacitive Load Drive
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
OPERATING TEMPERATURE RANGE
Single-Ended
RS = 0 , <3 dB of Peaking
TMIN to TMAX
VS = ± 5 V to ± 12 V
–10.1
+4.5
–40
NOTES
1Multitone testing performed with 800 mV rms across a 500 load at Points A and B on Figure 17.
Specifications subject to change without notice.
Typ
Max Unit
120
MHz
25
MHz
15
MHz
50
V/µs
30
ns
62
ns
200
ns
–95
–100
–67.2
–66
2.5
1.2
dBc
dBc
dBc
dBc
nV/Hz
pA/Hz
–1.5
+6
mV
+7.25 mV
+2.5
+5
µA
+7.5 µA
20
k
0.7
pF
–11.25 to +11.75
V
+10.1 V
100
mA
75
pF
± 13.0 V
4.0
5.5
mA/Amp
6.1
mA
80
dB
+85 °C
–2–
REV. 0

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]