IPP057N08N3G(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPP057N08N3G Datasheet PDF : 11 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
25 °C
100 °C
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=80 A pulsed
parameter: V DD
12
40 V
10
20 V
60 V
8
10
6
150 °C
4
2
1
0.1
0
1
10
100
1000
0
t AV [µs]
20
40
60
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
90
V GS
85
Qg
80
75
V g s(th)
70
65
Q g(th)
60
-60
-20
20
60 100 140 180
T j [°C]
Q gs
Rev. 1.0
page 7
Q sw
Q gd
Q gate
2008-01-25
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