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Número de pieza
componentes Descripción
IPP057N08N3G(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPP057N08N3G
(Rev.:2008)
OptiMOS®3 Power-Transistor
Infineon Technologies
IPP057N08N3G Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
1 Power dissipation
P
tot
=f(
T
C
)
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
180
100
150
80
120
60
90
40
60
20
30
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
1 µs
10 µs
10
2
100 µs
10
0
0.5
1 ms
0.2
10 ms
0.1
10
1
10
-1
0.05
DC
0.02
0.01
single pulse
10
0
10
-1
Rev. 1.0
10
0
10
1
V
DS
[V]
10
-2
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
page 4
2008-01-25
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