IPP057N08N3G(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPP057N08N3G Datasheet PDF : 11 Pages
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Parameter
Symbol Conditions
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=40 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=40 V, V GS=10 V,
-
t d(off)
I D=80 A, R G=1.6 Ω
-
tf
-
3570
963
36
18
66
38
10
4750 pF
1280
54
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
19
25 nC
Q gd
-
11
16
Q sw
V DD=40 V, I D=80 A,
V GS=0 to 10 V
-
19
27
Qg
-
52
69
V plateau
-
5.2
-V
Q oss
V DD=40 V, V GS=0 V
-
70
93 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=40 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
80 A
-
-
320
-
1.0
1.2 V
-
72
- ns
-
130
- nC
4) See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
2008-01-25
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