BC556 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

BC556

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

BC556

-80

VCBO Collector-Base Voltage

BC557 / BC560

BC558 / BC559

-50

V

-30

BC556

-65

VCEO Collector-Emitter Voltage

BC557 / BC560

BC558 / BC559

-45

V

-30

VEBO

IC

ICP

IBP

TJ

TSTG

Emitter-Base Voltage

Collector Current (DC)

Peak Collector Current (Pulse)

Peak Base Current (Pulse)

Junction Temperature

Storage Temperature Range

-5

V

-100

mA

-200

mA

-200

mA

150

°C

-65 to +150

°C

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Max.

Unit

PD

RθJA

Total Power Dissipation

Derate Above 25°C

Thermal Resistance, Junction-to-Ambient

500

mW

4.0

mW/°C

250

°C/W

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

© 2002 Fairchild Semiconductor Corporation

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7

2

www.fairchildsemi.com

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