LB11669MC-BH Ver la hoja de datos (PDF) - ON Semiconductor
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LB11669MC-BH Datasheet PDF : 4 Pages
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LB11669MC
Recommended Operating Conditions at Ta = 25°C
Parameter
Inflow current range
Common-mode input voltage range
Symbol
IIN
VCOM
Conditions
Ratings
Unit
5 to 25 mA
0.2 to VIN -2.3
V
Electrical Characteristics at Ta = 25°C, VCC=24V, R1=1kΩ, unless otherwise specified.
Parameter
Symbol
Conditions
Ratings
min
typ
VIN voltage
VIN
IIN = 6mA
5.95
6.3
CT capacitor charging current
ICT1
CT = 0.5V
1.8
2.55
Capacitor dis-charging current
ICT2
CT = 6.0V
0.15
0.23
Capacitor charging / dis-charging
current ratio
RCT
RCT = ICT1 / ICT2
10.5
11
CT charging voltage
VCTH
VCT / VIN
74
79
CT dis-charging voltage
VCTL
VCT / VIN
41
46
Output limit withstand voltage
VOLM
IO = 100mA
49
52
Output saturation voltage
VOL1
IO = 200mA
0.85
Hall input sensitivity
VHN
Including offset and hysteresis
±15
FG/RD output saturation voltage
VFG/RD
IFG/RD = 5mA
0.15
FG/RD output leak current
IFGL/RDL
VFG/RD = 14V
0.1
Thermal protection function
TSD
Design target value *
180
operating temperature
* Design target value and is not measured.
Unit
max
6.65
V
3.4 μA
0.31 μA
14.5
84
%
51
%
55
V
1.1
V
±30 mV
0.3
V
10 μA
°C
Package Dimensions
unit : mm (typ)
3426A
4.9
10
6
Pd max – Ta
1000
Specified board : 114.3×76.1×1.6mm3
glass epoxy
800
1
5
1.0
0.41
0.21
SANYO : SOIC10
600
400
200
0
– 30
390
0
30
60
90
120
Ambient temperature, Ta – °C
No.A2075-2/4
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