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BU3150

Bipolar Junction Transistor

Unspecified 

R

www.jdsemi.cn

深圳市晶导电子有限公司

ShenZhen Jingdao Electronic Co.,Ltd.

BU3150

Bipolar Junction Transistor

◆Si NPN

◆RoHS COMPLIANT

1．APPLICATION

Computer aided power and

Switch-mode power supplies

2．FEATURES

High voltage capability

Features of good high temperature

High switching speed

3．PACKAGE

TO-220A

4．Electrical Characteristics

4.1 Absolute Maximum Ratings

1 Base(B) 2 Collector(C) 3 Emitter(E)

Tamb= 25℃ unless specified

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

Collector-Emittor Voltage

Emittor- Base Voltage

Collector Current

Power Dissipation

Ta=25℃

Tc=25℃

Junction Temperature

Storage Temperature

4.2 Electrical Parameter

Tamb= 25℃ unless specified

PARAMETER

SYMBOL

Collector-Base Voltage

Collector-Emittor Voltage

Emittor-Base Voltage

Collector-Base Cutoff Current

Collector-Emittor Cutoff Current

Emittor-Base Cutoff Current

DC Current Gain

Collector-Emittor Saturation Voltage

Base-Emittor Saturation Voltage

Rising Time

Falling Time

Storage Time

Typical Frequency

BVCBO

BVCEO

BVEBO

ICBO

ICEO

IEBO

hFE*

VCE

*

sat

VBE

*

sat

tr

tf

ts

fT

VCBO

VCEO

VEBO

IC

Ptot

Tj

Tstg

1100

V

800

V

9

V

3

A

2

W

50

150

℃

-55～150

℃

TEST CONDITION

IC=1mA，IE=0

IC=1mA，IB=0

IE=1mA，IC=0

VCB=1100V, IE=0

VCE=800V, IB=0

VEB=9V, IC=0

VCE=5V, IC=1mA

VCE=5V, IC=200mA

IC=1A, IB=0.5A

IC=1A, IB=0.5A

IC=500mA (UI9600)

VCE=10V,IC=100mA,

f=1MHz

VALUE

MIN TYP MAX

1100

800

9

10

20

10

8

15

35

0.6

1.5

1.5

0.6

2

4.5

UNIT

V

V

V

μA

μA

μA

V

V

μs

μs

μs

4

MHz

＊: Pulse test tp≤300μs,δ≤2%

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C

Tel：0755-29799516 Fax：0755-29799515

第 1 页 2013 版

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